اینورتر منبع امپدانسی فعال جدید با تنش ولتاژ کاهش یافته در دو سرکلیدها
محورهای موضوعی : electrical and computer engineering
ویدا رنجبری زاد
1
,
ابراهيم بابايي
2
*
1 - دانشکده مهندسی برق و کامپیوتر، دانشگاه تبریز، تبریز، ایران
2 - دانشکده مهندسی برق و کامپیوتر، دانشگاه تبریز، تبریز، ایران
کلید واژه: اینورتر منبع امپدانسی فعال, اینورتر Z-source, بهره ولتاژ, تنش ولتاژ.,
چکیده مقاله :
در این مقاله، یک اینورتر منبع امپدانسی فعال جدید با تنش ولتاژ پایین در دو سر المانها و بهره ولتاژ مناسب پیشنهاد میشود. این ویژگی اینورتر پیشنهادی باعث کاهش سایز، حجم و قیمت تمام شده ساختار میگردد. اینورتر پیشنهاد شده از دو بخش منبع امپدانسی در سمت ورودی و پل H در سمت خروجی تشکیل شده که ولتاژ خروجی سه سطحی را ایجاد میکند. تجزیه و تحلیل حالتهای کاری و روش کنترلی اعمال شده برای تولید پالس های گیت کلیدها ارائه شده و بهره ولتاژ ساختار پیشنهادی محاسبه می شود. علاوه بر این، اجزای فعال و غیرفعال (اکتیو و پسیو) ساختار پیشنهادی طراحی میگردد. در ادامه، تحلیل مقایسهای از نقطهنظرهای بهره ولتاژ، تنش ولتاژ دو سر کلیدها، دیودها و همچنین مجموع ولتاژ خازنها به همراه نمودار مقایسهای مربوط به تعداد المانها، ما بین ساختار پیشنهادی و چند ساختار امپدانسی مرسوم، فراهم گردیده است. در آخر، ساختار پیشنهادی در محیط PSCAD طراحی شده و نتایج آن به طور کامل تحلیل میشود که این نتایج عملکرد مناسب ساختار پیشنهادی و صحت معادلات به دست آمده را نشان میدهد
In this paper, a new active impedance source inverter with low voltage stress across the elements and suitable voltage gain is proposed. This feature of the proposed inverter reduces the size, volume and cost of the structure. The proposed inverter consists of two parts: an impedance source on the input side and an H-bridge on the output side, which generates a three-level output voltage. An analysis of the operating modes and the control method applied to generate the gate pulses of the switches is presented, and the voltage gain of the proposed structure is calculated. In addition, the active and passive components of the proposed structure are designed. In the following, a comparative analysis is provided from the points of view of voltage gain, voltage stress across the switches, diodes and also the total voltage of the capacitors, along with a comparative diagram of the number of elements, between the proposed structure and several conventional impedance source structures. Finally, the proposed structure is designed in the PSCAD environment, and its results are fully analyzed, which shows the proper performance of the proposed structure and the accuracy of the obtained equations.
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