بررسی تاثیر تعداد اتمهای کربن موجود در عرض نوار نانومتری گرافنی بر جریان ترانزیستور تک الکترونی گرافنی
محورهای موضوعی : مهندسی برق و کامپیوتر
داریوش دیدبان
1
(دانشگاه کاشان)
وحیده خادم حسینی
2
(دانشگاه کاشان)
کلید واژه: ترانزیستور تک‌الکترونیتونل‌زنینقطه کوانتومینوار نانومتری گرافنی,
چکیده مقاله :
ترانزیستور تک‌الکترونی یک قطعه الکترونیکی در ابعاد نانومتر است که شامل سه الکترود فلزی و یک جزیره یا نقطه کوانتومی می‌باشد. جزیره می‌تواند از نانومواد کربنی مانند نوار نانومتری گرافنی انتخاب شود. تعداد اتمهای کربن موجود در نوار نانومتری گرافنی بر سرعت عملکرد ترانزیستور و ناحیه انسداد کولنی تأثیر می‌گذارد. در این تحقیق، جریان ترانزیستور تک‌الکترونی با جزیره‌ای از نوار نانومتری گرافنی مدل‌سازی شده است. تأثیر عواملی از جمله تعداد اتمهای کربن موجود در عرض نوار نانومتری گرافنی، طول نوار نانومتری گرافنی و ولتاژ اعمالی بر گیت روی جریان ترانزیستور بررسی شده است. نتایج مدل‌سازی نشان می‌دهد که با افزایش تعداد اتم‌ها در عرض نوار نانومتری گرافنی، ناحیه انسداد کولنی در نمودارهای پایداری بار ترانزیستور کاهش می‌یابد. همچنین کاهش طول نوار نانومتری گرافنی و افزایش ولتاژ اعمالی بر گیت باعث کاهش ناحیه جریان صفر ترانزیستور می‌شود. افزایش تعداد اتم‌ها در عرض سه جزیره باعث افزایش ناحیه تونل‌زنی تک‌الکترون و بهبود عملکرد ترانزیستور می‌شود.
A single electron transistor is a nanoscale device comprised of three metallic electrodes and one island or quantum dot. The island can made of carbon nano materials like a graphene nanoribbon. The number of carbon atoms along the width of the graphene nanoribbon affect on the speed of transistor operation and coulomb blockade region. In this research, the current for a single electron transistor utilizing a graphene nanoribbon island is modeled. The impact of several parameters on the transistor current is investigated including the number of carbon atoms along the width, length of nanoribbon, and the applied gate voltage. The modeling results show that increasing the number of carbon atoms along the width of the nanoribbon results in reduced coulomb blockade region. Moreover, reducing the length of nanoribbon and increasing the applied gate voltage cause a decrease in the zero current range of the transistor. Increasing the number of atoms along the width of three islands also gives a boost in the electron tunneling region and thus, the transistor performance will be improved.
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