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  • Reducing OFF-State Current in Nano-Scale Double Gate Junctionless Field Effect Transistor (DGJL-FET) Using Doping Engineering of Channel Region

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Manuscript ID : 13970313153747112555 Visit : 5849 Page: 37 - 42

20.1001.1.16823745.1397.16.1.5.1

Article Type: Original Research

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