Application of Neuro Space Mapping in Modeling Semiconductor Devices
Subject Areas : electrical and computer engineering
M.
Gordi Armaki
1
S. E.
Hosseini
2
Mohammad Kazem
Anvarifard
3
(فني و مهندسي شرق گيلان)
Keywords: Boltzmann equation Neuro Space Mapping RBF neural network Semiconductor device modeling,
Abstract :
In this paper an efficient method for modeling semiconductor devices using the drift-diffusion (DD) model and neural network is presented. Unlike HD model which is complicated, time consuming with high processing cost, the proposed method has lower complexity and higher simulate speed. In our method, a RBF neural network is used to modify DD parameters. The modified DD model can generate simulate results of accurate HD model. The proposed method is first applied to a silicon n-i-n diode in one dimension, and then to a silicon thin-film MOSFET in two dimensions, both for interpolation and extrapolation. The obtained results for basic variables, i.e., electron and potential distribution for different voltages, confirm the high efficiency of the proposed method.
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