Equivalent Circuit Modeling of a Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD)
Subject Areas : electrical and computer engineering
Mohammad
soroosh
1
(Tarbiat Modares University)
Keywords: Avalanche photodiode (APD)avalanche breakdowncircuit modelphoton absorption,
Abstract :
Using some simplifying assumptions in a separate absorption and multiplication avalanche photodiode (SAM-APD), in this paper we develop a circuit model. Then, using this circuit model, we calculate the gain and the quantum efficiency of the device. To examine the accuracy of the device, we compare the results obtained from the model with the experimental results. A fairly good correspondence between the model an the experimental results, shows that this model is capable of predicting the device behavior, while varying different parameters such as applied bias, device size, and hence the light wavelength.
[1] E. Gramsch, R. E. Avila, and J. Ferrer, "Development of a novel planar-construction avalanche photodiode," IEEE Trans. Nucl. Sci., vol. 48, no. 4, pp. 211-217, Aug. 2001.
[2] J. N. Haralson, and K. F. Brennan, "Novel edge suppression technique for planar avalanche photodiode," IEEE J. Quantum Electron, vol.35, no. 12, pp. 1863-1869, Dec. 1999.
[3] Kang, P. Mages, and A. R. Glawson, "Fused InGaAs-Si avalanche photodiodes with low-noise performances," IEEE Photon. Technol. Lett., vol. 14, no. 11, pp. 1593-1595, Nov. 2002.
[4] H. Nie, K. A. Anselm, C. Lenox, and P. Yuan, "Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 10, no. 3, pp. 409-411, Mar. 1998.
[5] W. Chen, and Sh. Liu, "PIN avalanche photodiodes model for circuit simulation," IEEE J. Quantum Electron., vol. 32, no. 12, pp. 2105-2111, Dec. 1996.
[6] K. A. Anselm, H. Nie, C. Hu, and C. Lenox, "Performance of thin separate absorption, charge, and multiplication avalanche photodiodes," IEEE J. Quantum Electron., vol. 34, no. 3, pp. 482-490, Mar. 1998.
[7] P. Bhattacharya, Semiconductor Optoelectronic Device, Prentice-Hall, 1997.
[8] H. Nie, C. Lenox, G. Kinsey, and A. L. Holmes, "Resonant cavity InGaAs/InAlAs separate absorption, charge and multiplication avalanche photodiode," in Proc. Conf. on Optoelectronic and Microelectronic Materials Devices, pp. 81-82, NJ, 1998.