تحلیل و مدلسازی آماری تغییرات تصادفی CMRR و PSRR در تقویتکننده هدایت انتقالی فناوری CMOS نانومتری
محورهای موضوعی : مهندسی برق و کامپیوتربهروز محبوبی 1 , داریوش دیدبان 2 *
1 - دانشگاه کاشان
2 - دانشگاه کاشان
کلید واژه: تغییرات آماری تصادفیتقویتکننده هدایت انتقالیتوزیع و وابستگی آماریفناوری نانو CMOS,
چکیده مقاله :
با پیشرفت فناوری مدارهای مجتمع و ورود ترانزیستورها به مقیاسهای نانومتری، تغییرات آماری مشخصات الکتریکی افزارهها به علت ماهیت گسسته بار و ماده و تغییرات تصادفی ناشی از نوسانات پروسه ساخت به طور چشمگیری افزایش پیدا کرده است. این تغییرات به نوبه خود باعث تغییر در مشخصههای خروجی بلوکهای مهم آنالوگ و علیالخصوص تقویتکنندهها میشود. در این مقاله به کمک شبیهسازی مونتکارلو یک مدار تقویتکننده هدایت انتقالی و استفاده از 1000 مدل فشرده متفاوت برای ترانزیستورهای MOSFET در فناوری 35 نانومتر، تغییرات آماری پارامترهای مهم مدار از لحاظ نحوه توزیع آماری، بررسی و آنالیز گردیده و مدل وابستگی آماری بین پارامترهای مهم مدار نیز استخراج شده است. تحلیل تغییرات آماری پارامترهای خروجی مدار و وابستگی آنها، دارای نتایج مستقیم در کاهش هزینه و زمان طراحی مدار بوده و حایز اهمیت فراوانی است.
With advancement of integrated circuit technology and aggressive scaling into nanometer regime, statistical variability in device electrical characteristics caused by discreteness of charge and fabrication process variations has significantly increased. These variations in turn result in fluctuations in output characteristics of important analog building blocks and in particular, amplifiers. In this paper, with the aid of Monte-Carlo simulations for a transconductance amplifier and using 1000 different compact models of MOSFET transistors in 35nm technology node, statistical variations of important circuit parameters are investigated and analyzed based on their statistical distributions. Moreover, statistical correlations between circuit parameters are extracted. Analysis of statistical variations for circuit parameters and their correlations has a direct impact on reduction of cost and time of a design and thus, is of great amount of significance.
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