طراحی مدار XOR کارامد مبتنی بر منطق نانومغناطیس
محورهای موضوعی : مهندسی برق و کامپیوترسمیرا سیدصالحی 1 * , زینب آزادی مطلق 2
1 - دانشگاه آزاد تهران جنوب
2 - دانشگاه آزاد اسلامی واحد تهران جنوب
کلید واژه: سلول نانومغناطيسيگيت اکثريتمدار XORمنطق نانومغناطیسنانوالكترونيك,
چکیده مقاله :
هدف این مقاله ارائه طرحی جدید و کارامد برای مدار XOR بر پایه تکنولوژی منطق نانومغناطیس در راستای تحقق‌بخشیدن به پیاده‌سازی مدارهای محاسباتی نانومغناطیسی از جمله جمع‌کننده، تفریق‌کننده و ضرب‌کننده می‌باشد. منطق نانومغناطیس به دلايلي از جمله سرعت بسيار بالا، توان مصرفي به شدت پايين، قابليت مجتمع‌سازي و کارکرد در دمای اتاق، یک جایگزین مناسب برای تکنولوژی ساخت ترانزیستورهای متعارف است. برای پیشبرد هدف این پژوهش، ابتدا به معرفی گیت‌های اکثریت در فناوری نانومغناطیس پرداخته می‌شود و سپس دو طرح کارامد با کمترین مساحت، کمترین تعداد المان نانومغناطیس و کمترین تأخیر برای XOR بر اساس یک گیت اقلیت سه ورودی و یک گیت اکثریت پنج ورودی پیشنهاد می‌شوند. المان‌های پایه مورد استفاده در این دو طرح از نوع سلول‌های نانومغناطیس عمودی متشکل از مواد Co/Pt، به دلیل مزیت‌های نسبی این ماده هستند. در جهت ایجاد عملکرد درست مدار همچنین نیاز به اعمال ساعت است که در این پژوهش ایجاد پارامتر ساعت با یک میدان مغناطیسی خارجی یکنواخت اعمال می‌شود. برای پیاده‌سازی این مدارها از ابزار MagCAD و برای بررسی صحت عملکرد این مدارها از شبیه‌ساز Modelsim استفاده شده است. با توجه به نتایج حاصل از این شبیه‌سازی می‌توان گفت که طرح پیشنهادی XOR سه ورودی تک‌لایه‌ای و چندلایه‌ای پیشنهادی در تعداد گیت‌ها به ترتیب 50% و 25%، در تأخیر به ترتیب 80% و 80% و در تعداد المان‌های به کار رفته به ترتیب 23% و 21% نسبت به پژوهش مشابه دارای عملکرد بهتری هستند.
The aim of this paper is to suggest new and efficient designs for XOR circuits based on nanomagnetic logic technology in order to implementation of nanomagnetic computational circuits such as adders, subtractors and multipliers. Nanomagnetic logic due to its properties such as very high speed, low power consumption, scalability and working on room temperature is a suitable alternative for conventional transistor technology. First, nanomagnetic majority gates are introduced then two efficient designs with minimum area, minimum number of nanomagnetic elements and lowest delays for XOR circuits are proposed based on a three-input minority gate and a five-input majority gate. Basic elements in these designs are out-of-plane nanomagnetic cells made of Co/Pt, due to relative advantages of this alloy. Clocking field which is an external uniform magnetic field is required for proper performance of these proposed circuits. MagCAD tool was used for implementation of these designs, and the accuracy of operation of these circuits was proved by applying Modelsim simulator. According to the results of this simulation, it is shown that the proposed single layer and multilayer three-input XOR gates have improvement in comparison to the state-of-art design in number of gates 50% and 25%, in delay 80% and 80%, and in the number of elements 23% and 21%, respectively.
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